Imaging and analysisSecondary electron detectors are crucial items in EBL. They are essential for optimum beam calibration and for mark recognition with respect to ultra high resolution direct write, sequential multi-layer exposures or "mix and match" applications with optical lithography. For complex mark registration schemes on challenging samples and resist systems, or due to the mark nature itself however, the result of standard mark registration and alignment algorithms can be poor - not necessarily with e_LiNE plus! Beyond standards like Everhart Thornley secondary electron (SE) detectors and backscattered electron detectors (BE) for imaging and mark registration, e_LiNE plus offers additional patented, high efficiency detectors: Inlens SE detectors, energy selective BE detectors (EsB), angular selective BE (AsB) detectors, scanning transmission electron detectors (STEM detector), or energy dispersive X-ray spectroscopy (EDX) detectors for investigation of: - topographical information
- compositional information, material contrast
- surface information
- crystallographic information
- ultra high resolution STEM imaging with dark field & bright field information and
- chemical / stoichiometric information or elemental mapping
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e_LiNE - Nanofabrication beyond electron beam lithography |
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Best signal to noise and edge detection with inlens SE-detector => more reliable mark recognition |
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Electron detection capabilities, here material contrast with energy selective inlens BSE-detector |
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Deep etched buried mark under 700nm PMMA on InP, visualized by different detectors (AsB, Inlens SE and ET.SE from left to right). => Exploitation of best signal quality by selecting optimum detector (or mixed signal) for most reliable mark recognition. |
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Identification of tetrapod-nanorods with 4nm diameter only (exhibiting material contrast) |
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