New publication on quantum technology - ionLiNE Plus proofs unique capabilities
One of the challenges in quantum photonics is the reliable creation of defects that can serve for spin-based quantum information processing, such as nitrogen vacancy centers in diamond. Another promising system is silicon vacancies in silicon carbide, as a widely used semiconductor material. The group headed by Prof. Weibo Gao at Nanyang Technological University in Singapore, in cooperation with the Raith application team, has recently shown that ion implantation with a focused Si++ ion beam can be employed for creating active silicon vacancies in SiC (http://pubs.acs.org/doi/abs/10.1021/acsphotonics.7b00230). Thus, the advanced capabilities of ionLiNE Plus – with its high resolution Si++ ion beam, accurate beam placement and unique laser interferometer stage – permit scalable fabrication with a dose control down to a few ions per spot.
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